发明名称 |
Methods and apparatuses promoting adhesion of dielectric barrier film to copper |
摘要 |
Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu-Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.
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申请公布号 |
US2005186339(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
US20040783316 |
申请日期 |
2004.02.20 |
申请人 |
APPLIED MATERIALS, INC., A DELAWARE CORPORATION |
发明人 |
RAJAGOPALAN NAGARAJAN;KIM BOK H.;D'CRUZ LESTER A.;CUI ZHENJIANG;DIXIT GIRISH A.;SIVARAMAKRISHNAN VISWESWAREN;M'SAAD HICHEM;SHEK MEIYEE;XIA LI-QUN |
分类号 |
C23C16/02;C23C16/42;C23C16/52;H01L21/768;(IPC1-7):C23C16/00;H05H1/24 |
主分类号 |
C23C16/02 |
代理机构 |
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地址 |
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