发明名称 |
GLASS-BASED SOI STRUCTURES |
摘要 |
Semiconductor-on-insulator (SOI) structures, including large area SOI structures, are provided which have one or more regions composed of a layer (15) of a substantially single-crystal semiconductor (e.g., doped silicon) attached to a support substrate (20) composed of an oxide glass or an oxide glass-ceramic. The oxide glass or oxide glass-ceramic is preferably transparent and preferably has a strain point of less than 1000°C, a resistivity at 250°C that is less than or equal to 1016 -cm, and contains positive ions (e.g., alkali or alkaline-earth ions) which can move within the glass or glass-ceramic in response to an electric field at elevated temperatures (e.g., 300-1000°C). The bond strength between the semiconductor layer (15) and the support substrate (20) is preferably at least 8 joules/meter2. The semiconductor layer (15) can include a hybrid region (16) in which the semiconductor material has reacted with oxygen ions originating from the glass or glass-ceramic. The support substrate (20) preferably includes a depletion region (23) which has a reduced concentration of the mobile positive ions. |
申请公布号 |
WO2005029576(A3) |
申请公布日期 |
2005.08.25 |
申请号 |
WO2004US04746 |
申请日期 |
2004.02.17 |
申请人 |
CORNING INCORPORATED;COUILLARD, JAMES G;MACH, JOSEPH F;GADKAREE, KISHOR P |
发明人 |
COUILLARD, JAMES G;MACH, JOSEPH F;GADKAREE, KISHOR P |
分类号 |
H01L21/20;H01L21/30;H01L21/46;H01L21/762 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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