| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a mesa-type semiconductor device which forms the electrode of a uniform thickness on only a part where an insulating film is not formed of the surface of the semiconductor layer of a semiconductor wafer on which a recess is formed in order to manufacture the mesa-type semiconductor device. <P>SOLUTION: The device element is formed by forming at least a pn junction in the semiconductor wafer 1. The recess 8 is formed around the device element by etching. An insulating film 5 is formed on the surface of the recess 8. A metal film 6a is formed on the surface of the semiconductor layer 4 and the insulating film 5 of a semiconductor wafer 1 by sputtering or vacuum evaporation. The adhesion between the semiconductor layer 4 and the metal film 6a is enhanced by carrying out a heat treatment, while the metal film on the insulating film 5 is selectively removed by jetting high-pressure water onto the surface of the semiconductor wafer 1. The chip of a mesa-type semiconductor device is formed by cutting the parts of the semiconductor wafer 1 underneath the recess 8. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
