发明名称 |
Method for fabricating metallic conductor paths on electronic components, involves forming resist mask on copper seed layer by lithographic structuring |
摘要 |
<p>A method for fabricating a metallic conductor path with copper-nickel-gold layer structure, in which the copper core of the conductor path is electrically deposited on a copper seed layer (4) with a diffusion barrier arranged under it. Initially a dielectric mask (9) is formed so that the mask structure comprises the conductor path being fabricated, followed by extensive application of a copper-seed layer (4) carrying on the structure of the dielectric mask (9). A resist-mask is formed on the copper seed layer (4) by a first lithographic structuring of the positive resist, followed by galvanic deposition of the copper core (3) on the exposed copper seed layer (4). A second lithographic structuring of the resist mask follows, with subsequent application of nickel-gold-layer on the copper core (3) and removal of the resist mask and etching of the diffusion barrier (10) and the copper seed layer (4).</p> |
申请公布号 |
DE102004005022(A1) |
申请公布日期 |
2005.08.25 |
申请号 |
DE20041005022 |
申请日期 |
2004.01.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BRINTZINGER, AXEL;TROVARELLI, OCTAVIO;LEIBERG, WOLFGANG |
分类号 |
H01L21/768;H01L23/532;H05K3/10;H05K3/24;(IPC1-7):H01L21/768;H05K1/09;H01L51/10 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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