摘要 |
A method of fabricating a polysilicon thin film produces a polysilicon thin film which is used to make a thin film transistor. The method includes depositing a silicon film containing amorphous silicon on a substrate, and performing thermal treatment on the silicon film at a predetermined temperature in an H<SUB>2</SUB>O atmosphere. Accordingly, the crystallization temperature and thermal treatment time are decreased when the amorphous silicon is crystallized by a solid phase crystallization method, and this prevents the substrate from being bent due to application of a thermal treatment process for a long time and at a high temperature. As a result of the invention, a polysilicon thin film having superior crystallization properties is obtained. Use of the polysilicon thin film in a thin film transistor results in the reduction of defects in the thin film resistor.
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