| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a growing method of a nitride semiconductor which can effectively form a nitride semiconductor, having a high ratio x of In in the inside of indium nitride gallium (InGaN) on the surface of a substrate, even at a low temperature of about 600°C or lower. <P>SOLUTION: A substrate 1 for crystal growth is maintained at a temperature of between about 500°C and about 600°C, a precursor of In, Ga, N is or simultaneously successively supplied into a reaction vessel, a high-output pulsed laser 10 whose energy distribution is made uniform by a beam forming optical system 13 is irradiated to the surface of the substrate, and indium nitride gallium is formed at the site by metal organic chemical vapor deposition. The ratio x of In in indium nitride gallium (In<SB>x</SB>Ga<SB>1-x</SB>N:0<X≤1) by the method is 0.5 or larger. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
