| 摘要 |
A light emitting device ( 10 ) comprises a beta-FeSi<SUB>2 </SUB>film ( 2 ) provided on a front surface of a Si substrate ( 1 ), first electrode ( 3 ) provided on a rear-surface side of the Si substrate ( 1 ), second electrodes 4 provided on a front-surface side of the beta-FeSi<SUB>2 </SUB>film ( 2 ). The beta-FeSi<SUB>2 </SUB>film ( 2 ) has the conductivity different from that of Si substrate ( 1 ). Between the Si substrate ( 1 ) and beta-FeSi<SUB>2 </SUB>film ( 2 ), a pn junction is formed. The beta-FeSi<SUB>2 </SUB>film ( 2 ) functions as a luminescent layer. Its luminescence properties are not influenced very much by the type and purity of the substrate.
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