| 摘要 |
PROBLEM TO BE SOLVED: To obtain a piezoelectric thin film element having a PZT piezoelectric thin film, where a piezoelectric constant equivalent to bulk ceramics PZT can be obtained. SOLUTION: In the piezoelectric thin film element having a piezoelectric thin film 3 of a metallic oxide having a perovskite structure sandwiched between upper and lower electrodes 4 and 2 on a substrate 1, the sum of an orientation rate in the direction of an (a) axis of the piezoelectric thin film 3 and that in the direction of (a) (b) axes is≥90% to a direction vertical to the surface of the substrate 1. COPYRIGHT: (C)2005,JPO&NCIPI
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