发明名称 Semiconductor devices having thermal spacers
摘要 A high power, high frequency semiconductor device has a plurality of unit cells connected in parallel. The unit cells each having a controlling electrode and first and second controlled electrodes. A thermal spacer divides at least one of the unit cells into a first active portion and a second active portion, spaced apart from the first potion by the thermal spacer. The controlling electrode and the first and second controlled electrodes of the unit cell cross over the first thermal spacer.
申请公布号 US2005184339(A1) 申请公布日期 2005.08.25
申请号 US20040786962 申请日期 2004.02.25
申请人 ALLEN SCOTT T.;MILLIGAN JAMES W. 发明人 ALLEN SCOTT T.;MILLIGAN JAMES W.
分类号 H01L29/06;H01L29/20;H01L29/24;H01L29/812;(IPC1-7):H01L29/76 主分类号 H01L29/06
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