发明名称 |
METHOD FOR FILM FORMATION OF GATE INSULATOR, APPARATUS FOR FILM FORMATION OF GATE INSULATOR, AND CLUSTER TOOL |
摘要 |
This method for film formation has a first step of forming a first insulation film, the essential component of which is a material having a first dielectric constant, on the surface of a semiconductor substrate and a second step of forming a second insulation film, the essential component of which is a material having a second dielectric constant larger than the first dielectric constant, on the first insulation film to be thicker than this first insulation film. Since the process of forming a film of a high dielectric constant material that constitutes the second insulation film is executed successively, following the formation of a barrier layer that is the first insulation film, it is possible to form a gate of a high dielectric constant material stable to the substrate. <IMAGE> |
申请公布号 |
EP1326271(A4) |
申请公布日期 |
2005.08.24 |
申请号 |
EP20010965653 |
申请日期 |
2001.09.14 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
KIRYU, HIDEKI;TAKAHASHI, TSUYOSHI;AOYAMA, SHINTARO;SHINRIKI, HIROSHI;IGETA, MASANOBU |
分类号 |
C23C16/30;C23C16/34;C23C16/40;C23C16/452;H01L21/00;H01L21/28;H01L21/314;H01L21/316;H01L29/51 |
主分类号 |
C23C16/30 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|