发明名称 Current biased dual DBR grating semiconductor laser
摘要 Dual-wavelength operation is easily achieved by biasing the gain section. Multiple gratings spaced apart from each other are separated from an output aperture by a gain section. A relatively low coupling coefficient, kappa, in the front grating reduces the added cavity loss for the back grating mode. Therefore, the back grating mode reaches threshold easily. The space section lowers the current induced thermal interaction between the two uniform grating sections, significantly reducing the inadvertent wavelength drift. As a result, a tunable mode pair separations (Deltalambda) as small as 0.3 nm and as large as 6.9 nm can be achieved.
申请公布号 US2005180479(A1) 申请公布日期 2005.08.18
申请号 US20040778599 申请日期 2004.02.13
申请人 THE BOARD OF TRUSTEES OF THE UNIVERSTIY OF ILLINOIS 发明人 COLEMAN JAMES J.;ROH S. D.
分类号 H01S3/08;H01S5/00;H01S5/0625;H01S5/12;H01S5/125;H01S5/22;(IPC1-7):H01S5/00 主分类号 H01S3/08
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