| 摘要 |
PROBLEM TO BE SOLVED: To change trench depth in a wiring forming step by a damascene method, and to reduce the unevenness of a wiring thickness, based on it and the unevenness of a wiring resistor. SOLUTION: A method of manufacturing a semiconductor device includes a step of sequentially depositing a second insulating film 5 and a third insulating film 6 on a first insulating film 3, and a step of alternately etching the second and third insulating films 5, 6 and forming an aperture. The second insulating film 3 has specific constituting elements which are not the constituting elements of the first and third insulating films 3, 6. In etching, the variation of the emission spectrum of a chemical bond, excluding specific configuration elements and including the configuration elements of the first and third insulating films 3, 6, is detected, and is stopped, based on the result. Thus, the second insulating film 5 of different configuration elements is inserted into the insulating film. A fixed wiring trench depth can be realized, by observing a certain specific emission spectrum variation on the strength in connection with the distinct insulating film of the configuration elements. COPYRIGHT: (C)2005,JPO&NCIPI
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