| 摘要 |
A disclosed embodiment is a method for fabricating a SiGe layer, the method comprising depositing a silicon buffer layer (325, Fig. 3B) over a single crystalline region (306, Fig. 3B) and at least one isolation region (314, 316, Fig. 3B) at a first pressure, where the silicon buffer layer (325, Fig. 3B) is continuous, i.e. comprises small poly grains, over the at least one isolation region (314, 316, Fig. 3B). The method further includes forming a silicon germanium layer (327, Fig. 3C) over the silicon buffer layer (325, Fig. 3C) at a second pressure, where the silicon germanium layer (327, Fig. 3C) is also continuous, i.e. comprises small poly grains, over the at least one isolation region (314, 316, Fig. 3C). In one embodiment, the first pressure is less than the second pressure. In other embodiments, a structure is fabricated according to the above method. |
