| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which exhibits satisfactory transmittance when a light source of ≤200 nm, specifically F<SB>2</SB>excimer laser light (157 nm) is used, and is excellent in uniformity of application, etching time dependency and development defects, and to provide a pattern forming method using the same. <P>SOLUTION: The positive resist composition comprises (a) a fluorine-containing resin which has fluorine atoms and is decomposed by the action of an acid to increase solubility in an alkaline developer, (b) a compound which generates an acid upon irradiation with an actinic ray or a radiation, (c) a compound of a specified structure and (d) a solvent. The pattern forming method uses the same. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
