发明名称 |
Laser beam irradiating apparatus, laser beam irradiating method, and method of manufacturing a semiconductor device |
摘要 |
A laser beam irradiating apparatus comprising, a plurality of lasers, member for synthesizing a plurality of laser beams emitted respectively from the plurality of lasers into a single laser beam on a stage, and member for moving the synthesized laser beam on the stage while keeping a specific shape thereof. A semiconductor film can be crystallized or an impurity element doped therein can be activated by irradiating a laser beam to the semiconductor film from the laser beam irradiating apparatus arranged as above. Consequently, it is possible to provide a laser beam irradiating apparatus capable of achieving uniform annealing efficiently by employing an optical system simpler than a conventional one and using laser beams having attenuated regions. Also, it is possible to provide a method of irradiating a laser beam using the laser beam irradiating apparatus, and to provide a method of manufacturing a semiconductor device including the laser beam irradiating method in the fabrication sequence thereof.
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申请公布号 |
US2005181550(A1) |
申请公布日期 |
2005.08.18 |
申请号 |
US20050099662 |
申请日期 |
2005.04.06 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
TANAKA KOICHIRO |
分类号 |
B23K26/06;B23K26/073;B23K26/08;H01L21/20;H01L21/268;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/84 |
主分类号 |
B23K26/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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