发明名称 Laser beam irradiating apparatus, laser beam irradiating method, and method of manufacturing a semiconductor device
摘要 A laser beam irradiating apparatus comprising, a plurality of lasers, member for synthesizing a plurality of laser beams emitted respectively from the plurality of lasers into a single laser beam on a stage, and member for moving the synthesized laser beam on the stage while keeping a specific shape thereof. A semiconductor film can be crystallized or an impurity element doped therein can be activated by irradiating a laser beam to the semiconductor film from the laser beam irradiating apparatus arranged as above. Consequently, it is possible to provide a laser beam irradiating apparatus capable of achieving uniform annealing efficiently by employing an optical system simpler than a conventional one and using laser beams having attenuated regions. Also, it is possible to provide a method of irradiating a laser beam using the laser beam irradiating apparatus, and to provide a method of manufacturing a semiconductor device including the laser beam irradiating method in the fabrication sequence thereof.
申请公布号 US2005181550(A1) 申请公布日期 2005.08.18
申请号 US20050099662 申请日期 2005.04.06
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO
分类号 B23K26/06;B23K26/073;B23K26/08;H01L21/20;H01L21/268;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/84 主分类号 B23K26/06
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