PROCESS FOR PRODUCING p-TYPE ZINC OXIDE THIN FILM AND THIN FILM, AND SEMICONDUCTOR DEVICE

摘要

A process for producing a thin film, in which not only can high crystallinity and surface flatness be realized but also dopant doping can be performed at high concentration. There is provided a process comprising the low temperature highly doped layer growing step of performing dopant doping while growing a thin film at a given first temperature; the annealing step of discontinuing the growth of thin film and annealing the thin film at a given second temperature higher than the first temperature; and the high temperature lowly doped layer growing step of growing a thin film at the second temperature.