SEMICONDUCTOR DEVICE HAVING CAPACITOR AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a capacitor capable of increasing an electrostatic capacity and simultaneously raising a reliability, and provide a method of manufacturing the semiconductor device.

SOLUTION: The semiconductor device includes a plurality of buried contact plugs 106 which are two-dimensionally arranged by penetrating a lower interlayer insulating film 102 formed on a substrate 100. A mold layer 110 covers the lower interlayer insulating film 102 and the buried contact plugs 106. The mold layer 110 is provided with an opening 115 simultaneously exposing the plurality of buried contact plugs 106. The semiconductor device further includes a supporting section connected with an upper part side of the exposed buried contact plugs 106 and a plurality of lower electrodes including a wall part which extends upward along an interior wall of an adjacent opening from an edge of the supporting section. A width of the opening is widened by simultaneously exposing the buried contact plugs 106 at the opening. A reliability of a dielectric film 127 is raised by thickening the dielectric film 127 formed in the opening.

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