发明名称 CAPACITOR HAVING ENHANCED STRUCTURAL STABILITY, METHOD OF MANUFACTURING THE CAPACITOR, SEMICONDUCTOR DEVICE HAVING THE CAPACITOR, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE
摘要
申请公布号 KR20050080670(A) 申请公布日期 2005.08.17
申请号 KR20040008770 申请日期 2004.02.10
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, DAE HWAN;HUH, MIN;SHIN, DONG WON;LEE, BYUNG HYUN
分类号 H01L21/02;H01L21/8242;H01L27/02;H01L27/108;H01L29/92;(IPC1-7):H01L21/824 主分类号 H01L21/02
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