Low doped layer for nitride-based semiconductor device

摘要

A repeatable and uniform low doped layer (108) is formed using modulation doping by forming alternating sub-layers of doped and undoped nitride semiconductor material atop another layer. A Schottky diode is formed of such a low doped nitride semiconductor layer (108) disposed atop a much more highly doped nitride semiconductor layer (106). The resulting device has both a low on-resistance when the device is forward biased and a high breakdown voltage when the device is reverse biased. <IMAGE>