发明名称 Method of reducing pattern distortions during imprint lithography processes
摘要 The present invention is directed to a method of reducing distortions in a pattern disposed on a layer of a substrate, defining a recorded pattern, employing a mold having the pattern recorded therein, defining an original pattern. The method includes, defining a region on the layer in which to produce the recorded pattern. Relative extenuative variations between the substrate and the mold are created to ensure that the original pattern defines an area coextensive with the region. Thereafter, the recorded pattern is formed in the region. The relative extenuative variations are created by heating or cooling of the substrate so that the region defines an area that is slightly smaller/larger than the area of the original pattern. Then compression/tensile forces are applied to the mold to provide the recorded pattern with an area coextensive with the area of the region.
申请公布号 US6929762(B2) 申请公布日期 2005.08.16
申请号 US20020293223 申请日期 2002.11.13
申请人 MOLECULAR IMPRINTS, INC. 发明人 RUBIN DANIEL I.
分类号 B29C59/00;B29C59/02;G03F7/00;(IPC1-7):B29C33/40;B29C35/08;B29C43/02 主分类号 B29C59/00
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