发明名称 Semiconductor memory device having hierarchical structure of data input/output line and precharge method thereof
摘要 A semiconductor memory device having a hierarchical structure of data input/output lines and a precharge method thereof. A precharge method in a semiconductor memory device having a hierarchical structure includes precharging the global input/output line pairs with half of a memory cell array voltage, and precharging the local input/output line pairs with the half of the memory cell array voltage.
申请公布号 US6930939(B2) 申请公布日期 2005.08.16
申请号 US20030660568 申请日期 2003.09.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM KYU-NAM;KYUNG KYU-HYUN
分类号 G11C7/00;G11C7/10;(IPC1-7):G11C7/00 主分类号 G11C7/00
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