发明名称 |
Semiconductor memory device having hierarchical structure of data input/output line and precharge method thereof |
摘要 |
A semiconductor memory device having a hierarchical structure of data input/output lines and a precharge method thereof. A precharge method in a semiconductor memory device having a hierarchical structure includes precharging the global input/output line pairs with half of a memory cell array voltage, and precharging the local input/output line pairs with the half of the memory cell array voltage.
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申请公布号 |
US6930939(B2) |
申请公布日期 |
2005.08.16 |
申请号 |
US20030660568 |
申请日期 |
2003.09.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LIM KYU-NAM;KYUNG KYU-HYUN |
分类号 |
G11C7/00;G11C7/10;(IPC1-7):G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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