发明名称 Memory device having different burst order addressing for read and write operations
摘要 A method comprising reordering a block of n-bit words output from a memory array according to information in certain address bits before outputting at least one n-bit word from a memory device and ignoring said certain address bits before inputting at least one n-bit word into said memory array. The method may additionally comprise examining at least two of the least significant bits of a column address and wherein said reordering is responsive to said examining step. Thus, for reads a specific 8 bit burst is identified by the most significant column address bits while the least significant bits CA 0 -CA 2 identify the most critical word and the read wrap sequence after the critical word. For writes, the burst is identified by the most significant column addresses with CA 0 -CA 2 being "don't care" bits assumed to be 000.
申请公布号 US6931483(B2) 申请公布日期 2005.08.16
申请号 US20040832083 申请日期 2004.04.26
申请人 MICRON TECHNOLOGY, INC. 发明人 JANZEN JEFFREY W.
分类号 G11C11/407;G11C7/10;G11C8/00;G11C8/04;G11C11/401;(IPC1-7):G06F12/00 主分类号 G11C11/407
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