| 发明名称 |
Substrate processing method |
| 摘要 |
A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a planar antenna.
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| 申请公布号 |
US2005176223(A1) |
申请公布日期 |
2005.08.11 |
| 申请号 |
US20040988561 |
申请日期 |
2004.11.16 |
| 申请人 |
|
发明人 |
MATSUYAMA SEIJII;SUGAWARA TAKUYA;OZAKI SHIGENORI;NAKANISHI TOSHIO;SASAKI MASARU |
| 分类号 |
C23C16/00;H01L21/314;H01L21/316;H01L21/3205;H01L21/425;H01L21/4763;(IPC1-7):C23C16/00;H01L21/320;H01L21/476 |
主分类号 |
C23C16/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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