发明名称 FORMING METHOD FOR NANOSTRUCTURE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method to easily form a nanostructure on a large-area substrate in a short period of time in a highly efficient process, which can be easily applied to existing processes. <P>SOLUTION: This method to form the nanostructure comprises a stage to form a photoresist layer on a substrate, a stage to form the nanostructure on the photoresist layer, a stage to expose the photoresist layer by irradiating light on the substrate where the nanostructure is formed, a stage to develop the photoresist layer that has been exposed, and a stage to make the substrate have the nanostructure by performing dry etching on the substrate making use of the photoresist layer that has been developed. Using this method, the nanostructure can be easily formed on the large-area substrate in a short period of time in a highly efficient process, which can be easily applicable to existing processes by applying SPR after forming the photoresist layer out of the nanostructure that has been manufactured in advance. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005217390(A) 申请公布日期 2005.08.11
申请号 JP20040301277 申请日期 2004.10.15
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KHANG YOON-HO;CHOI BYOUNG-IYONG
分类号 G03F7/38;B81C1/00;B82B3/00;B82Y10/00;B82Y20/00;B82Y40/00;G03F1/14;G03F7/20;H01L21/027;H01L29/06 主分类号 G03F7/38
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