| 摘要 |
PROBLEM TO BE SOLVED: To provide a control circuit including a delaying part for an MTCMOS (multi-threshold complementary metal oxide semiconductor) device, and a control method. SOLUTION: This MTCMOS device includes a current control switch for a relatively high threshold voltage which responds to a first control signal, a logic circuit part for a relatively low threshold voltage and a flipflop for storing data outputted from the logic circuit part for the low threshold voltage in response to a second control signal. When the MTCMOS device is changed from an active mode to a sleep mode, this control circuit switches the logic state of the second control signal from a first logic state to a second logic state and switches the logic state of the first control signal from a second logic state to a first logic state after a predetermined delay period of time tD1. In addition, the control circuit switches the logic state of the first control signal from the first logic state to the second logic state when the MTCMOS device is changed from the sleep mode to the active mode, and switches the logic state of the second control signal from the second logic state to the first logic state after a predetermined delay period of time tD2 different from the tD1. COPYRIGHT: (C)2005,JPO&NCIPI
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