Ion implantation method in semiconductor device

摘要

An ion implantation method in a semiconductor device, by which performance of the semiconductor device can be enhanced by defining a stable ion implantation area in a manner of improving an edge profile of an ion implantation mask to enhance performance of the semiconductor device. The present invention includes the steps of coating a mask material on a semiconductor substrate, patterning the mask material to form an ion implantation mask exposing an ion implantation area of the semiconductor substrate, transforming an edge profile of the ion implantation mask into a round pattern from a sharp pattern, and implanting ions into the exposed ion implantation area of the semiconductor substrate using the transformed ion implantation mask.