| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reducing the number of steps of forming a bump by forming the bump consistently in a wafer step. <P>SOLUTION: A wiring pattern 5 is formed on the surface of a semiconductor substrate 5, and a metal layer of about 10 to 40μm is formed on the upper layer of the wiring pattern. After a resist 8 having a specific pattern is formed on an upper layer of this metal layer, etching is implemented. Subsequently, after the resist is removed, and a passivation film 7 covering the wiring pattern and the metal layer is formed, etching of an insulating layer is implemented so as to expose the surface of the metal layer. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
