发明名称 BAND GAP REFERENCE CIRCUIT AND SEMICONDUCTOR DEVICE HAVING THE CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide a band gap reference circuit having satisfactory temperature characteristics and a semiconductor device having the band gap reference circuit. SOLUTION: The band gap reference circuit is so configured that a fixed band gap voltage is generated by connecting a resistance between emitters of a pair of transistors which have bases connected in common and are different by current densities, and adjusting base potentials so as to equalize collector currents of both transistors. The band gap reference circuit has a current adjustment means which adds currents to which an integral multiple of the collector current is distributed at an adjustable ratio, to emitter current of respective transistors. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005216040(A) 申请公布日期 2005.08.11
申请号 JP20040022658 申请日期 2004.01.30
申请人 SONY CORP 发明人 NAGATA TADASHI;SEGAMI MASAHIRO
分类号 G05F3/30;G05F1/56;H03F3/343;(IPC1-7):G05F3/30 主分类号 G05F3/30
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