METHOD FOR FORMING WIRING, FABRICATION PROCESS OF SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURING SEMICONDUCTOR PACKAGING EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To suppress stripping of a low dielectric constant film in polishing a conductive film. SOLUTION: A diffusion prevention film 2 is formed on a silicon substrate 1 and a low dielectric constant film 3 having a dielectric constant not larger than 3 is formed. The low dielectric constant film 3 is then removed by a removal width A from the edge 10 of the silicon substrate 1. A cap film 4 is formed on the low dielectric constant film 3 and a trench 5 for wiring is formed in the cap film 4, the low dielectric constant film 3 and the diffusion prevention film 2. After a barrier film 6 and a Cu film 7 are formed, the Cu film 7 is removed from the edge 10 by a removal width B which is different from the removal width A by 1 mm or more. The unnecessary Cu film 7 and the barrier metal film 6 on the cap film 4 are removed by CMP. COPYRIGHT: (C)2005,JPO&NCIPI