发明名称 |
METHOD AND APPARATUS FOR REAL-TIME IN-SITU ION IMPLANTATION WITH CLOSED LOOP CONTROL |
摘要 |
The invention relates to a method and apparatus for real-time in-situ implantation and measurement incorporating a feedback loop to adjust the implantation dose of a substrate during the manufacturing and testing of semiconductor wafers. During processing, the substrate, such as a silicon wafer, is transported between a measuring device and an implantation device multiple times to ensure that where the beam from the implantation device hits the substrate, the doping concentration falls within the range of desired parameters. |
申请公布号 |
WO2005010955(A3) |
申请公布日期 |
2005.08.11 |
申请号 |
WO2004US23420 |
申请日期 |
2004.07.20 |
申请人 |
QC SOLUTIONS, INC.;STEEPLES, KENNETH |
发明人 |
STEEPLES, KENNETH |
分类号 |
H01J37/304;H01J37/317;H01L21/00;H01L21/04;H01L21/66 |
主分类号 |
H01J37/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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