发明名称 |
[METHOD OF FABRICATING A FLASH MEMORY] |
摘要 |
A method of fabricating a flash memory is provided. A substrate having several device isolation structures for defining an active region is provided. A tunneling dielectric layer and a patterned mask layer are formed over the active region. A portion of each device isolation structure is removed to form a plurality of trenches. A dielectric layer is formed over the substrate and a sacrificial layer is filled the trenches. A portion of the dielectric layer is removed using the sacrificial layer as a self-aligned mask. The patterned mask layer is removed and a conductive layer that exposed the top section of the sacrificial layers is formed over the substrate. After removing the sacrificial layer, an inter-gate dielectric layer and a control gate are formed over the substrate. A source region and a drain region are formed in the substrate on each side of the control gate.
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申请公布号 |
US2005176200(A1) |
申请公布日期 |
2005.08.11 |
申请号 |
US20040709640 |
申请日期 |
2004.05.19 |
申请人 |
WANG LEO;DU CHIEN-CHIH;PITTIKOUN SAYSAMONE |
发明人 |
WANG LEO;DU CHIEN-CHIH;PITTIKOUN SAYSAMONE |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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