METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a compound semiconductor device wherein organic residue can be eliminated without deteriorating property of the compound semiconductor device. SOLUTION: Vapor deposition of a Shottky electrode 111 which consists of Ti/Al/Ti is performed on an exposed i-type AlGaAs Schottky layer 105, and lift-off is performed by using resist stripper. After that, cleaning is performed in the state that shading of a surface of the i-type AlGaAs Schottky layer 105 is performed, by using either one of ozone (O3) hotwater whose ozone concentration is at most 13 mg/L, and hydrogen (H2) hotwater whose hydrogen ion concentration (pH) is at least 6 and at most 8 or using both of them. COPYRIGHT: (C)2005,JPO&NCIPI