| 摘要 |
In a semiconductor photodetector 1 according to the present invention, flat surfaces of three steps with different heights are formed in a top surface portion of a semi-insulating GaAs substrate 2 . An n-type GaAs layer 3 , an i-type GaAs layer 4 , and a p-type GaAs layer 5 are successively deposited on the lower step surface formed in a central region of the semi-insulating GaAs substrate 2 . Furthermore, a p-side ohmic electrode 6 is provided astride and above a flat surface formed by the p-type GaAs layer 5 and the upper step surface of the semi-insulating GaAs substrate 2 , and an n-side ohmic electrode 7 is provided astride and above a flat surface formed by the n-type GaAs layer 3 and the middle step surface of the semi-insulating GaAs substrate 2.
|
