| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of purifying SiO having low P concentration from an SiO raw material having high P concentration and a method of manufacturing high purity Si by using the purified SiO. SOLUTION: The method of purifying SiO is carried out by: introducing a gas capable of forming a low boiling point compound by the reaction with phosphorus into a gaseous SiO produced in an SiO producing apparatus to react the gas with P contained in the SiO gas to form the low boiling point compound; condensing and recovering mainly SiO in a condenser provided in the downstream side of the gaseous SiO; and passing the low boiling point compound without condensation. The method of manufacturing the high purity Si uses the SiO purified in this way. COPYRIGHT: (C)2005,JPO&NCIPI
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