| 摘要 |
The invention relates to a semiconductor structure with active zones, such as light diodes or photodiodes (10, 16, 24, 26, 36, 46, 54, 68, 74, 80), comprising a substrate (SUB) with at least two active zones (AZ1 - AZn), each of which emits or absorbs a radiation of differing wavelength. According to the invention, a multi-wavelength diode may be achieved, whereby a first (lower) active zone (AZ1) is grown on a surface of the substrate (SUB), whereby one or several further active zones (AZ1 - Azn) are epitaxially grown one on the other and the active zones (AZ1 - AZn) are serially connected from the lower active zone (AZ1) to an upper active zone (AZn), by means of tunnel diodes (TD1 - TDn), serving as low-impedance resistors. |
