| 摘要 |
PROBLEM TO BE SOLVED: To improve an accuracy in detecting positioning marks formed on a substrate when positioning takes place for exposure. SOLUTION: In a wafer-shaped SOI substrate 10, an epitaxial silicon layer 22, which is a convex formation material layer, is formed through an epitaxial growth method on a second silicon layer 16 constituting an SOI layer of the mark formation area 150, which is a scribe line area, and then the corresponding epitaxial silicon layer is etched to pattern a convex 22a as a positioning mark. COPYRIGHT: (C)2005,JPO&NCIPI |
