METHOD OF MANUFACTURING INTEGRATED CIRCUIT AND INTEGRATED CIRCUIT

摘要

PROBLEM TO BE SOLVED: To provide an integrated circuit capable of coping with moisture erosion, interlayer delamination, and the outward diffusion of copper. SOLUTION: A method 1300 of manufacturing an integrated circuit 100, 900 provides a substrate 102 having a semiconductor element 300, and includes a step of forming an intermetal dielectric layer 112 over the substrate 102 and the semiconductor element 300. A metal wire 114 is formed above the semiconductor element 300 and in contact therewith, and a passivation layer 118, 902 is formed over the intermetal dielectric layer 112. A bond pad 304 is formed connected to the metal wire 114. A protective recessed part 200, 1000 formed with a sidewall passivation layer is formed through the passivation layer 118, 902 and the intermetal dielectric layer 112, and located between the metal wire 114 and the outside edge of the integrated circuit 100, 900. COPYRIGHT: (C)2005,JPO&NCIPI