| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing device for fixing a formation speed, and for realizing high speed thick film formation by a remote plasma CVD method or the like. SOLUTION: This semiconductor manufacturing device is configured to carry out any of film formation, etching and surface treatment, by introducing reactive gas 7 to a reaction chamber 8 and bringing it into contact with a substrate 9a. The reaction device is constituted of an excitation chamber 6 and the reaction chamber 8, and the ejection of the reactive gas is carried out from at least a main exhaust port 10 installed in the reaction chamber 8 and an auxiliary exhaust port 3b installed in the excitation chamber 3 as well. COPYRIGHT: (C)2005,JPO&NCIPI
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