发明名称 SILICON CARBIDE MATRIX COMPOSITE MATERIAL, PROCESS FOR PRODUCING THE SAME AND PROCESS FOR PRODUCING PART OF SILICON CARBIDE MATRIX COMPOSITE MATERIAL
摘要 Silicon carbide matrix composite material (1) comprises silicon carbide matrix (2) as a host. The silicon carbide matrix (2) comprises first silicon carbide phase (3) of 0.1 to 10 mu m average crystal grain diameter and second silicon carbide phase (4) of 0.01 to 2 mu m average crystal grain diameter. In interstices of silicon carbide crystal grains constituting the silicon carbide matrix (2), liberated silicon phase (5) amounting to, for example, 5 to 50 mass% based on the composite material (1) is present continuously in network form. This fine structure enables realizing high strength and high toughness of the silicon carbide composite material (1). <IMAGE>
申请公布号 EP1561737(A1) 申请公布日期 2005.08.10
申请号 EP20030733472 申请日期 2003.06.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SUYAMA, SHOKO;KAMEDA, TSUNEJI;ITOH, YOSHIYASU
分类号 C04B35/565;C04B35/56;C04B35/573;C04B37/00;(IPC1-7):C04B35/56 主分类号 C04B35/565
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