发明名称 |
Low-k dielectric layer stack including an etch indicator layer for use in the dual damascene technique |
摘要 |
A low-k dielectric layer stack is provided including a silicon based dielectric material with a low permittivity, wherein an intermediate silicon oxide based etch indicator layer is arranged at a depth that represents the depth of a trench to be formed in the dielectric layer stack. A thickness of the etch indicator layer is sufficiently small to not unduly compromise the overall permittivity of the dielectric layer stack. On the other hand, the etch indicator layer provides a prominent optical emission spectrum to reliably determine the time point when the etch process has reached the etch indicator layer. Thus, the depth of trenches in highly sophisticated low-k dielectric layer stacks may reliably be adjusted to minimize resistance variations of the metal lines.
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申请公布号 |
US6927161(B2) |
申请公布日期 |
2005.08.09 |
申请号 |
US20030420214 |
申请日期 |
2003.04.22 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
RUELKE HARTMUT;STRECK CHRISTOF;SULZER GEORG |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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地址 |
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