| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
A method for fabricating a semiconductor device comprises the steps of: forming a polysilicon film 26 on a silicon substrate 10 ; removing a natural oxide film 28 on the surface of the polysilicon film 26 ; forming a homogeneous chemical oxide film 30 on the surface of the polsysilicon film 26 having the natural oxide film 28 removed; forming a silicon oxide film 32 to be used as a hard mask on the polysilicon film 26 with the chemical oxide film 30 formed on; and etching the polysilicon film 26 with the silicon oxide film 32 as a mask to form a gate electrode 16 of the polysilicon film 26.
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| 申请公布号 |
US6927111(B2) |
申请公布日期 |
2005.08.09 |
| 申请号 |
US20030694359 |
申请日期 |
2003.10.28 |
| 申请人 |
FUJITSU LIMITED |
发明人 |
MORI TOSHIFUMI |
| 分类号 |
H01L29/417;H01L21/205;H01L21/28;H01L21/306;H01L21/3065;H01L21/318;H01L21/3213;H01L21/8234;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
H01L29/417 |
| 代理机构 |
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代理人 |
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