Ion implantation with multiple concentration levels

摘要

A method that includes providing a semiconductor substrate having a mask on a surface thereof. The mask includes a first region having no masking elements and a second region having a plurality of masking elements. Each of the plurality of masking elements has a dimension that is equal to a first length, the first length less than twice a diffusion length of a dopant. The method further includes bombarding the semiconductor substrate and masking element with ions of the dopant. The ions form a first impurity concentration in the first region and a second impurity concentration in the second region.