Solid-state image sensing device

摘要

A solid-state image-sensing device has a photosensitive element that produces an electric signal commensurate with the amount of light incident thereon, a transistor of which the first electrode and the control electrode are connected to one electrode of the photosensitive element, and a resetting portion for resetting the transistor by feeding a predetermined pulse signal to the second electrode of the transistor. The resetting portion resets the transistor in such a way as to inhibit the transistor from operating in a subthreshold region when the amount of light incident on the photosensitive element is below a predetermined level.