发明名称 |
Structure for preventing burnt fuse pad from further electrical connection |
摘要 |
A semiconductor device with a capability can prevent a burnt fuse pad from re-electrical connection, wherein the semiconductor device includes a bump pad and a fuse pad over a wafer. The fuse pad includes the burnt fuse pad having a gap for electrical isolation. The semiconductor device comprises a dielectric layer, disposed substantially above the burnt fuse pad and filling the gap, and a bump structure, disposed on the bump pad. The foregoing semiconductor device can further comprise a passivation layer, which exposes the bump pad and a portion of the burnt fuse pad. Wherein, the dielectric layer is over the passivation layer, covers the exposed portion of the burnt fuse pad and fills the gap.
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申请公布号 |
US6927964(B2) |
申请公布日期 |
2005.08.09 |
申请号 |
US20030604772 |
申请日期 |
2003.08.15 |
申请人 |
ADVANCED SEMICONDUCTOR ENGINEERING, INC. |
发明人 |
TONG HO-MING;LEE CHUN-CHI;FANG JEN-KUANG;HUANG MIN-LUNG;CHEN JAU-SHOUNG;SU CHING-HUEI;WENG CHAO-FU;LEE YUNG-CHI;CHOU YU-CHEN;WU TSUNG-HUA;TAO SU |
分类号 |
H01L21/60;H01L23/31;H01L23/525;(IPC1-7):H02H5/00 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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