BILAYER CMP PROCESS TO IMPROVE SURFACE ROUGHNESS OF MAGNETIC STACK IN MRAM TECHNOLOGY,申请号EP20030810441-传众专利搜索

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发明名称	BILAYER CMP PROCESS TO IMPROVE SURFACE ROUGHNESS OF MAGNETIC STACK IN MRAM TECHNOLOGY
摘要
申请公布号	EP1559107(A1)	申请公布日期	2005.08.03
申请号	EP20030810441	申请日期	2003.11.05
申请人	INFINEON TECHNOLOGIES AG;INTERNATIONAL BUSINESS MACHINES CORPORATION	发明人	COSTRINI, GREG;HUMMEL, JOHN, P.;KRISHNAN, MAHADEVAIYER;LOW, KIA-SENG
分类号	G11C11/16;H01F10/26;H01F10/32;H01F41/30;H01L27/22;H01L43/12;(IPC1-7):G11C11/16	主分类号	G11C11/16
代理机构		代理人
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