发明名称 |
Static random access memory device having decreased sensitivity to variations in channel physical characteristics |
摘要 |
A static random access memory (SRAM) device and a method of manufacturing the same. In one embodiment, the SRAM device includes: (1) a first bias voltage contact biasable to a first potential, (2) a second bias voltage contact biasable to a second potential that differs from the first potential and (3) a well having channels formed therein and connected to one of said first and second bias voltage contacts based on a transistor characteristic of said SRAM device that bears on static noise margin (SNM) and write trip voltage V<SUB>trip</SUB>.
|
申请公布号 |
US6925010(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20030616755 |
申请日期 |
2003.07.10 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
HOUSTON THEODORE W. |
分类号 |
G11C11/412;(IPC1-7):G11C7/00 |
主分类号 |
G11C11/412 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|