| 发明名称 |
Semiconductor device having channel formation region comprising silicon and containing a group IV element |
| 摘要 |
A silicon film provided on a blocking film 102 on a substrate 101 is made amorphous by doping Si+, and in a heat-annealing process, crystallization is started in parallel to a substrate from an area 100 where lead serving as a crystallization-promoting catalyst is introduced.
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| 申请公布号 |
US6924506(B2) |
申请公布日期 |
2005.08.02 |
| 申请号 |
US20000726337 |
申请日期 |
2000.12.01 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
ZHANG HONGYONG;TAKAYAMA TORU |
| 分类号 |
H01L21/20;(IPC1-7):H01L29/04;H01L31/20;H01L31/036 |
主分类号 |
H01L21/20 |
| 代理机构 |
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