发明名称 |
Semiconductor substrate made of group III nitride, and process for manufacture thereof |
摘要 |
To provide a semiconductor substrate of a group III nitride with low defect density and little warp, this invention provides a process comprising such steps of: forming a GaN layer 2 on a sapphire substrate 1 of the C face ((0001) face); forming a titanium film 3 thereon; heat-treating the substrate in an atmosphere containing hydrogen gas or a gas of a compound containing hydrogen to form voids in the GaN layer 2; and thereafter forming a GaN layer 4 on the GaN layer 2'.
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申请公布号 |
US6924159(B2) |
申请公布日期 |
2005.08.02 |
申请号 |
US20020105404 |
申请日期 |
2002.03.26 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
USUI AKIRA;SHIBATA MASATOMO;OSHIMA YUICHI |
分类号 |
H01L21/205;C30B25/02;H01L21/20;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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