| 摘要 |
<P>PROBLEM TO BE SOLVED: To store data by using a ferroelectric capacitor formed by selectively growing ferroelectric on an arbitrary electrode in a self-alignment manner for one portion of a memory cell. <P>SOLUTION: A method for manufacturing a semiconductor storage comprises a process for forming a first thin film 42 on a semiconductor substrate 20, a process for forming a hole 45 on the first thin film 42, and a process for selectively forming ferroelectric 3 inside the hole or nearby including the hole. Since the ferroelectric 3 is selectively arranged at the hole 45 in which the first thin film 42 is provided, a process for machining and forming the ferroelectric can be omitted, thus obtaining a fine ferroelectric capacitor 10 without any damaged regions 30 in the ferroelectric. And in the ferroelectric in the storage, the polarization direction caused by isotropic change in crystal orientation by polycrystallization is not disordered, and the crystal orientation of ferroelectric can be controlled in orientation for maximizing polarization deviation, thus greatly improving the writing and reading characteristics of data in the memory cell. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
