| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based III group compound semiconductor light-emitting element for emitting ultraviolet rays without using any GaN layers. <P>SOLUTION: The semiconductor light-emitting element 1000 comprises 25nm thick AlGaN buffer layer 101, an n layer 102 made of Al<SB>0.12</SB>Ga<SB>0.88</SB>N, an n cladding layer 103 made of a multiple layer, an emission layer 104 in a single quantum well structure (SQW) by sandwiching a well layer made of non-doped Al<SB>0.005</SB>In<SB>0.045</SB>Ga<SB>0.95</SB>N having approximately 2 nm film thickness with a barrier layer, a block layer 105 made of Al<SB>0.16</SB>Ga<SB>0.84</SB>N, a p cladding layer 106 made of a multiple layer, a p-type contact layer 107 made of GaN, electrodes 110, 120, 140, a protective film 130, and a reflection film 150 on a sapphire substrate 100. Since the AlGaN buffer layer 101 is used, the crystallizability of the n layer 102 made of Al<SB>0.12</SB>Ga<SB>0.88</SB>N is improved, and the crystallizability of a semiconductor layer on the n layer 102 can also be improved. Since no GaN:Si layers are used for an n-side layer, ultraviolet rays generated at the lower portion of the emission layer 104 cannot be absorbed by each layer, are reflected by the reflection film 150, and can be taken out, thus improving the emission efficiency of the ultraviolet light-emitting element. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
